Global Warming

Study data from V.M. Kalygina et al provide new insights into semiconductors

  2009 NOV 18 - (VerticalNews.com) -- According to recent research from Russia, "The electric characteristics of the p (+)-i-n (+) structures are analyzed for two types of GaAs epitaxial layers: the structures with an i layer based on undoped GaAs and an i layer based on GaAs:Cr. The forward currents of the first-type diodes are caused by recombination in the space-charge region."

  "The reverse I-V characteristics at the voltages to 10-15 V are determined by the component of the generation current. At /U/ > 20 V, the current growth is caused by the Poole-Frenkel effect, which is replaced by electron tunneling through the potential-barrier top with increasing the voltage as a result of the electron-phonon interaction. The forward branches of the I-V characteristics of the p (+)-i-n (+) diodes with the i layer based on GaAs:Cr are explained by the unipolar injection in the semiconductor, which is replaced by the bipolar injection with increasing the voltage," wrote V.M. Kalygina and colleagues.

  The researchers concluded: "The reverse I-V characteristics are linear in the range of 1-15 V; at /U/ > 20 V, an increase in current is caused by the impact ionization."

  Kalygina and colleagues published their study in Semiconductors (Effect of deep impurity on electric characteristics of epitaxial GaAs structures. Semiconductors, 2009;43(10):1292-1297).

  For additional information, contact V.M. Kalygina, Tomsk VV Kuibyshev State University, Tomsk 634050, Russia.

  Publisher contact information for the journal Semiconductors is: Maik Nauka, Interperiodica, Springer, 233 Spring St., New York, NY 10013-1578, USA.

  Keywords: Electronics, Semiconductor, Voltage, Semiconductors.

  This article was prepared by VerticalNews Global Warming editors from staff and other reports. Copyright 2009, VerticalNews Global Warming via VerticalNews.com.